? semiconductor components industries, llc, 2001 april, 2000 rev. 1 1 publication order number: mmbt2222att1/d mmbt2222att1 preferred device general purpose transistor npn silicon these transistors are designed for general purpose amplifier applications. they are housed in the sot416/sc75 package which is designed for low power surface mount applications. maximum ratings (t a = 25 c) rating symbol max unit collectoremitter voltage v ceo 40 vdc collectorbase voltage v cbo 75 vdc emitterbase voltage v ebo 6.0 vdc collector current continuous i c 600 madc thermal characteristics characteristic symbol max unit total device dissipation, (1) t a = 25 c p d 150 mw thermal resistance, junction to ambient r q ja 833 c/w operating and storage junction temperature range t j , t stg 55 to +150 c (1) device mounted on fr4 glass epoxy printed circuit board using the minimum recommended footpad. device package shipping ordering information mmbt2222att1 sot416 http://onsemi.com case 463 sot416/sc75 style 1 3000 / tape & reel device marking 1p 3 2 1 preferred devices are recommended choices for future use and best overall value. collector 3 1 base 2 emitter
mmbt2222att1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (1) (i c = 1.0 madc, i b = 0) v (br)ceo 40 e vdc collectorbase breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 75 e vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 e vdc base cutoff current (v ce = 60 vdc, v eb = 3.0 vdc) i bl e 20 nadc collector cutoff current (v ce = 60 vdc, v eb = 3.0 vdc) i cex e 10 nadc on characteristics (1) dc current gain (1) (i c = 0.1 madc, v ce = 10 vdc) (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 150 madc, v ce = 10 vdc) (i c = 500 madc, v ce = 10 vdc) h fe 35 50 75 100 40 e e e e e e collectoremitter saturation voltage (1) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) e e 0.3 1.0 vdc baseemitter saturation voltage (1) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.6 e 1.2 2.0 vdc smallsignal characteristics currentgain e bandwidth product (i c = 20 madc, v ce = 20 vdc, f = 100 mhz) f t 300 e mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo e 8.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo e 30 pf input impedance (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) h ie 0.25 1.25 k ohms voltage feedback ratio (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) h re e 4.0 x 10 4 smallsignal current gain (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) h fe 75 375 e output admittance (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) h oe 25 200 mhos noise figure (v ce = 10 vdc, i c = 100 adc, r s = 1.0 k ohms, f = 1.0 khz) nf e 4.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = 0.5 vdc, t d e 10 ns rise time (v cc 3 . 0 vdc , v be 0 . 5 vdc , i c = 150 madc, i b1 = 15 madc) t r e 25 ns storage time (v cc = 30 vdc, i c = 150 madc, t s e 225 ns fall time (v cc 30 vdc , i c 150 madc , i b1 = i b2 = 15 madc) t f e 60 ns 1. pulse test: pulse width 300 s, duty cycle 2.0%.
mmbt2222att1 http://onsemi.com 3 figure 1. turnon time figure 2. turnoff time switching time equivalent test circuits scope rise time < 4 ns *total shunt capacitance of test jig, connectors, and oscilloscope. +16 v -2 v < 2 ns 0 1.0 to 100 m s, duty cycle 2.0% 1 k w +30 v 200 c s * < 10 pf +16 v -14 v 0 < 20 ns 1.0 to 100 m s, duty cycle 2.0% 1 k +30 v 200 c s * < 10 pf -4 v 1n914 1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 i c , collector current (ma) figure 3. dc current gain h fe , dc current gain v ce , collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 i b , base current (ma) figure 4. collector saturation region
mmbt2222att1 http://onsemi.com 4 figure 5. turnon time i c , collector current (ma) 70 100 200 50 t, time (ns) 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 i c /i b = 10 t j = 25 c t r @ v cc = 30 v t d @ v eb(off) = 2.0 v t d @ v eb(off) = 0 3.0 2.0 300 500 500 t, time (ns) 5.0 7.0 10 20 30 50 70 100 200 300 figure 6. turnoff time i c , collector current (ma) 10 20 70 100 5.0 7.0 30 50 200 300 500 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s = t s - 1/8 t f t f figure 7. frequency effects f, frequency (khz) 4.0 6.0 8.0 10 2.0 0.1 figure 8. source resistance effects r s , source resistance (ohms) nf, noise figure (db) 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 nf, noise figure (db) 0.01 0.02 0.05 r s = optimum r s = source r s = resistance i c = 1.0 ma, r s = 150 w 500 m a, r s = 200 w 100 m a, r s = 2.0 k w 50 m a, r s = 4.0 k w f = 1.0 khz i c = 50 m a 100 m a 500 m a 1.0 ma 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k figure 9. capacitances reverse voltage (volts) 3.0 5.0 7.0 10 2.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 c cb 20 30 c eb figure 10. currentgain bandwidth product i c , collector current (ma) 70 100 200 300 50 500 f t , current-gain bandwidth product (mhz) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 v ce = 20 v t j = 25 c
mmbt2222att1 http://onsemi.com 5 figure 11. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 v, voltage (volts) 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v figure 12. temperature coefficients i c , collector current (ma) -0.5 0 +0.5 coefficient (mv/ c) -1.0 -1.5 -2.5 r vc for v ce(sat) r vb for v be 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500 1.0 k 1.0 v -2.0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500
mmbt2222att1 http://onsemi.com 6 1.4 1 0.5 min. (3x) 0.5 min. (3x) typical 0.5 soldering pattern unit: mm p d = t j(max) t a r q ja p d = 150 c 25 c 833 c/w = 150 milliwatts ? the soldering temperature and time should not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient should be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied dur- ing cooling * soldering a device without preheating can cause exces- sive thermal shock and stress which can result in damage to the device. information for using the sot416 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection sot416/sc90 power dissipation the power dissipation of the sot416/sc90 is a func- tion of the pad size. this can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction tem- perature of the die, r q ja , the thermal resistance from the device junction to ambient; and the operating temperature, t a . using the values provided on the data sheet, p d can be calculated as follows. the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 125 milliwatts. the 833 c/w assumes the use of the recommended foot- print on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, a higher power dissipation can be achieved using the same footprint. interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference should be a maximum of 10 c.
mmbt2222att1 http://onsemi.com 7 step 1 preheat zone 1 ramp" step 2 vent soak" step 3 heating zones 2 & 5 ramp" step 4 heating zones 3 & 6 soak" step 5 heating zones 4 & 7 spike" step 6 vent step 7 cooling 200 c 150 c 100 c 50 c time (3 to 7 minutes total) t max solder is liquid for 40 to 80 seconds (depending on mass of assembly) 205 to 219 c peak at solder joint desired curve for low mass assemblies 100 c 150 c 160 c 140 c figure 13. typical solder heating profile desired curve for high mass assemblies 170 c for any given circuit board, there will be a group of control settings that will give the desired heat pattern. the operator must set temperatures for several heating zones, and a figure for belt speed. taken together, these control settings make up a heating aprofileo for that particular circuit board. on machines controlled by a computer, the computer remembers these profiles from one operating session to the next. figure 7 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. this profile will vary among soldering systems but it is a good starting point. factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. this profile shows temperature versus time. solder stencil guidelines prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. a solder stencil is required to screen the optimum amount of solder paste onto the footprint. the stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. the stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. typical solder heating profile the line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. the two profiles are based on a high density and a low density board. the vitronics smd310 convection/infrared reflow soldering system was used to generate this profile. the type of solder used was 62/36/2 tin lead silver with a melting point between 177189 c. when this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. the components on the board are then heated by conduction. the circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
mmbt2222att1 http://onsemi.com 8 package dimensions sc75 (sc90, sot416) case 46301 issue b dim min max min max inches millimeters a 0.70 0.80 0.028 0.031 b 1.40 1.80 0.055 0.071 c 0.60 0.90 0.024 0.035 d 0.15 0.30 0.006 0.012 g 1.00 bsc 0.039 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 1.45 1.75 0.057 0.069 l 0.10 0.20 0.004 0.008 s 0.50 bsc 0.020 bsc notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) b a b s d g 3 pl 0.20 (0.008) a k j l c h 3 2 1 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mmbt2222att1/d thermal clad is a trademark of the bergquist company. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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